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| HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S March 1997 10A, 400V and 500V N-Channel IGBTs Packages HGTD10N40F1, HGTD10N50F1 JEDEC TO-251AA EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features * 10A, 400V and 500V * VCE(ON) 2.5V Max. * TFALL 1.4s * Low On-State Voltage * Fast Switching Speeds * High Input Impedance Applications * Power Supplies * Motor Drives * Protective Circuits COLLECTOR (FLANGE) GATE EMITTER HGTD10N40F1S, HGTD10N50F1S JEDEC TO-252AA Description The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and HGTD10N50F1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low power integrated circuits. PACKAGING AVAILABILITY PART NUMBER HGTD10N40F1 HGTD10N50F1 HGTD10N40F1S HGTD10N50F1S PACKAGE TO-251AA TO-251AA TO-252AA TO-252AA BRAND G10N40 G10N50 G10N40 G10N50 Terminal Diagram N-CHANNEL ENHANCEMENT MODE C G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in the tape and reel, i.e., HGTD10N40F19A. E Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified HGTD10N40F1 HGTD10N40F1S 400 400 20 12 10 75 0.6 -55 to +150 HGTD10N50F1 HGTD10N50F1S 500 500 20 12 10 75 0.6 -55 to +150 UNITS V V V A A W W/oC oC Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCES Collector-Gate Voltage RGE = 1M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC90 Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 File Number 2425.4 3-1 Specifications HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S Electrical Specifications , TC = +25oC, Unless Otherwise Specified LIMITS HGTD10N40F1 HGTD10N40F1S HGTD10N50F1 HGTD10N50F1S MIN 500 2.0 MAX 4.5 250 100 2.5 2.2 2.5 2.2 UNITS V V A A nA V V V V V nC ns ns ns ns mJ PARAMETERS Collector-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Collector-Emitter On-Voltage SYMBOL BVCES VGE(TH) ICES TEST CONDITIONS IC = 250A, VGE = 0V VGE = VCE, IC = 1mA TJ = TJ = +150oC, +150oC, VCE = 400V VCE = 500V MIN 400 2.0 - MAX 4.5 250 100 2.5 2.2 2.5 2.2 IGES VCE(ON) VGE = 20V, VCE = 0V TJ = TJ = TJ = +150oC, +150oC, +25oC, IC = 5A, VGE = 10V IC = 5A, VGE = 15V IC = 5A, VGE = 10V TJ = +25oC, IC = 5A, VGE = 15V Gate-Emitter Plateau Voltage On-State Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Energy Loss Per Cycle (Off Switching Dissipation = WOFF x Frequency) Turn-Off Delay Time Fall Time Turn-Off Energy Loss Per Cycle (Off Switching Dissipation = WOFF x Frequency) Thermal Resistance Junction-toCase (IGBT) VGEP QG(ON) tD(ON) tRI tD(OFF) tFI WOFF IC = 5A, VCE = 10V IC = 5A, VCE = 10V Resistive Load, IC = 5A, VCE = 400V, RL = 80, TJ = +150oC, VGE = 10V, RG = 25 5.3 (Typ) 13.4 (Typ) 45 (Typ) 35 (Typ) 130 (Typ) 1400 (Typ) 0.64 (Typ) tD(OFF) tFI WOFF Inductive Load (See Figure 11), IC = 5A, VCE(CLP) = 400V, RL = 80, L = 50H, TJ = +150oC, VGE = 10V, RG = 25 - 375 1200 1.2 - 375 1200 1.2 ns ns mJ RJC - 1.67 - 1.67 oC/W Typical Performance Curves 12 ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) PULSE TEST, VCE = 10V PULSE DURATION = 250s DUTY CYCLE < 2% 10 VGE = 15V VGE = 10V VGE = 6.0V PULSE DURATION = 250s DUTY CYCLE < 0.5% TC = +25oC VGE = 5.5V VGE = 5.0V 4 VGE = 4.5V VGE = 4.0V 0 0 2 4 6 8 10 0 2 4 6 8 10 VGE, GATE-TO-EMITTER VOLTAGE (V) VGE, GATE-TO-EMITTER VOLTAGE (V) 10 8 8 TC = -55oC TC = +25 C TC = +150oC o 6 6 4 2 2 0 FIGURE 1. TYPICAL TRANSFER CHARACTERISTICS FIGURE 2. TYPICAL SATURATION CHARACTERISTICS 3-2 HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S Typical Performance Curves (Continued) 4 VCE(ON), SATURATION VOLTAGE (V) ICE, DC COLLECTOR CURRENT (A) TJ = +150oC 3 VGE = 10V 18 16 14 12 10 8 6 4 2 0 1 10 ICE, COLLECTOR-EMITTER CURRENT (A) 100 +25 +50 +75 +100 o VGE = 15V 2 VGE = 15V VGE = 10V 1 0 +125 +150 TC , CASE TEMPERATURE ( C) FIGURE 3. SATURATION VOLTAGE vs COLLECTOR-EMITTER CURRENT (TYPICAL) 1000 f = 1MHz 800 C, CAPACITANCE (pF) FIGURE 4. DC COLLECTOR CURRENT vs CASE TEMPERATURE 0.5 TJ +150oC, VCE = 400V L = 50H tD(OFF)I , TURN-OFF DELAY (s) 0.4 600 CISS 400 0.3 0.2 VGE = 15V, RG = 50 VGE = 10V, RG = 50 VGE = 15V, RG = 25 VGE = 10V, RG = 25 200 COSS 0 0 CRSS 5 10 15 20 25 0.1 0.0 1 ICE, COLLECTOR-EMITTER CURRENT (A) 10 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 5. CAPACITANCE vs COLLECTOR-TO-EMITTER VOLTAGE (TYPICAL) 2 TJ = +150oC, VGE = 10V RG = 25, L = 50H tFI , FALL TIME (s) FIGURE 6. TURN-OFF DELAY vs COLLECTOR-TO-EMITTER CURRENT (TYPICAL) 10 WOFF , TURN-OFF SWITCHING LOSS (mJ) TJ = +150oC, VGE = 10V RG = 25, L = 50H VCE = 400V 1 VCE = 400V 1.0 VCE = 200V 0 1 10 ICE, COLLECTOR-EMITTER CURRENT (A) 100 0.1 1 10 ICE, COLLECTOR-EMITTER CURRENT (A) 100 FIGURE 7. FALL TIME vs COLLECTOR-TO-EMITTER CURRENT (TYPICAL) FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOREMITTER CURRENT (TYPICAL) 3-3 HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S Typical Performance Curves (Continued) fOP , MAXIMUM OPERATING FREQUENCY (KHz) 1000 VCE, COLLECTOR-EMITTER VOLTAGE (V) TJ = +150oC, TC = +100oC, VGE = 10V RG = 25, PT = 75W, L = 50H VCE = 200V 100 VCE = 400V fMAX1 = 0.05/tD(OFF)I fMAX2 = (PD - PC)/WOFF 500 GATEEMITTER VOLTAGE VCC = BVCES RL = 100 IG(REF) = 0.33mA VGE = 10V VCC = BVCES 10 VGE, GATE-EMITTER VOLTAGE (V) 375 250 5 10 0.75 BVCES 125 0.50 BVCES 0.25 BVCES 0 IG(REF) 20 IG(ACT) 0.75 BVCES 0.50 BVCES 0.25 BVCES 0 IG(REF) 1 1 10 ICE, COLLECTOR-EMITTER CURRENT (A) 100 COLLECTOR-EMITTER VOLTAGE NOTE: PD = ALLOWABLE DISSIPATION TIME (s) 80 PC = CONDUCTION DISSIPATION IG(ACT) FIGURE 9. MAXIMUM OPERATING FREQUENCY vs COLLECTOR CURRENT AND VOLTAGE (TYPICAL) FIGURE 10. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT Test Circuit RL L = 50H 1/RG = 1/RGEN + 1/RGE RGEN = 50 VCC 400V + - 20V 0V RGE = 50 FIGURE 11. INDUCTIVE SWITCHING TEST CIRCUIT All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 3-4 |
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